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| microwave power mmic amplifier microwave power mmic amplifier microwave power mmic amplifier microwave power mmic amplifier microwave microwave microwave microwave semiconductor semiconductor semiconductor semiconductor tmd0507-2a tmd0507-2a tmd0507-2a tmd0507-2a technical data technical data technical data technical data features features features features high power broad band internally matched p1db=33.0dbm at 5.1ghz to 7.2ghz high gain hermetically sealed package g1db=22.0db at 5.1ghz to 7.2ghz absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain supply voltage v dd v15 gate supply voltage v gg v-10 input power p in w0.1 flange temperature t f c -30 +80 storage temperature t stg c -65 +175 rf performance specifications ( ta= 25 c ) characteristics symbol condition unit min. typ. max. output power at 1db compression point p 1db dbm 32.0 33.0 ? power gain at 1db compression point g 1db db 20.0 22.0 ? gain flatness (1)* ? g1 db ?? 1.5 gain flatness (2)** ? g2 db ?? 2.0 drain current*** i dd a ? 1.60 1.90 input vswr vswri v dd1 =v dd2 =v dd3 = 10v v gg = -5v f = 5.1 ? 7.2ghz ??? 3.0 * ? g1 at f = 5.9 ? 7.2ghz ** ? g2 at f = 5.1 ? 7.2ghz *** i dd = i dd1 + i dd2 + i dd3 the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subject to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. june 1998
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